Retraction Note: Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure

Retraction Note: Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure

RETRACTION NOTE The Editor has retracted this article [1] due to significant overlap in text and figures with a previous article published in another journal [2]. The authors do not agree with the retraction.

Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure

It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed...

Designer Ge/Si composite quantum dots with enhanced thermoelectric properties.

An otherwise random, self-assembly of Ge/Si composite quantum dots (CQDs) on Si was controlled by inserting a layer of Si, sub-dot stacks, and post-annealing to produce micron-scale-thick QD layers with desired QD morphology, interface density, and composition distribution. A heterostructure consisting of a deliberate insertion of Si between Ge sub-dots is shown to improve the epitaxial coheren...

Improved Thermal Stability of NiSi Nanolayer in Ni-Si Co-sputtered Structure

Electrical, structural and morphological properties of Ni silicide films formed in Ni(Pt 4at.% )/Si(100) and Ni0.6Si0.4(Pt4at.% )/Si(100) structures at various annealing temperatures ranging from 200 to 1000 oC were studied. The Ni(Pt) and Ni0.6Si0.4(Pt) films with thickness of 15 and 25 nm were deposited by RF magnetron co-sputtering method, respectively.  The annealing process of the structur...

Strain relaxation in self-assembled Ge(Si)/Si quantum dots